It is expected that an achievement of such flexible- and nonvolatile-type memory device will be the next step toward the realization of flexible electronic systems. Recently, flexible resistive memories have been reported in various oxides AC220 research buy including graphene oxide (GO) [13], HfO2[14], NiO [15], and single-component polymer [16] thin films. However,

the huge dispersion in switching parameters, deprived reliability, and poor understanding of the RS behavior are some of the this website fundamental issues which hinder its application for high-density flexible electronics. It is well articulate that the amorphous high-κ gate dielectrics, which have already been established to be promising for semiconductor transistor technologies, selleckchem can be good alternative for ReRAM applications as long as such these materials can perform good RS behaviors. Rare earth metal oxides as high-κ dielectrics

are considered as the replacement of hafnium-based technology [17–19], among which Lu2O3 is the promising one as it shows well-insulating property, large bandgap (5.5 eV), better hygroscopic immunity, good thermal stability, and adequate dielectric constant of approximately 11 [20]. Gao et al. reported promising unipolar RS behavior in amorphous Lu2O3 oxide [21]. In contrast, Plasmin we previously demonstrated the bipolar RS in various high-κ rare earth metal oxides, such as Tm2O3, Yb2O3, and Lu2O3, on silicon substrate [22]. The different RS behavior may be originated from their distinguished morphological changes. However, no flexible memory device has been demonstrated and detail switching dynamics is still unclear in this material. The superior experimental switching characteristics in Lu2O3 and room temperature deposition process allow it to be a possible functional material for flexible electronics. Therefore, in this study we investigate the RS behaviors of the sputter deposited lutetium sesquioxide

(Lu2O3) thin film on flexible substrate for nonvolatile flexible memory application. In addition, we demonstrate that the memory performance of ReRAM on a flexible substrate has excellent electrical and mechanical reliabilities due to the high ductility of amorphous Lu2O3 thin film and the merit of the low-temperature process. Unlike other typical flexible resistive memory, better RS characteristics were achieved for advanced flexible memory applications. Methods Flexible Ru/Lu2O3/ITO RS memory devices were fabricated on flexible polyethylene terephthalate (PET) substrates. The sputtered ITO-coated PET substrate was glued on a Si dummy wafer with polyimide tape to mechanically support the flexible substrate during fabrication process.