It is found that both the
anodizing voltage and time can affect the PL emissions of the produced layers. An increase in anodizing voltage between 100 to 115 V leads to a redshift in the PL emissions and improves the PL activity LY2606368 solubility dmso of the layers in the visible region. It means that the defect-based subband gaps present in the prepared layers are narrowed. An increase in the anodizing time between 10 to 40 h shifts the PL emissions spectra toward the ultraviolet region and creates new point defects. This effect widens the defect-based subband gaps and decreases their PL activity in the visible range. Our results show that anodizing parameters that optimize the PL activity of the nanoporous layers in the visible range are close to those which optimize the semiconductor I-BET151 solubility dmso behavior of the layers at room temperature. Therefore, PL investigations could be helpful in explaining this semiconductor behavior. Most of the Al2O3 polymorphs exhibit good thermal and chemical stability and, depending on their specific properties, ZD1839 research buy are used in a variety of applications. The semiconductor behavior of this type of Al2O3 makes PAAO a promising material for future applications. Authors’ information Dr. AN is an assistant professor of experimental condensed matter physics at the Department of Physics, University of Isfahan,
Isfahan, Iran. His research interests cover oxide and II-VI semiconductors, soft magnetic materials, and ferroelectrics. Dr. SJA is an assistant professor of
computational condensed matter physics at the Department of Physics, University of Isfahan, Isfahan, Iran. Dr. SJA is interested in performing density functional theory-based ab initio calculations to study electronic, structural, hyperfine interactions including magnetic hyperfine fields and electric field gradients, quantum size effects, acoustic, and optical properties of a broad range of materials including strongly correlated systems and biomaterials in bulk, surface, interface, nanowire, and quantum dot forms. Dr. MHY is an associate professor of Nanotechnology Research Group, Faculty of Applied AZD9291 purchase Sciences, Malek-Ashtar University of Technology, Shahinshahr, Isfahan, Iran. His research interests are nanomagnetism, II-VI quantum dots, and nanowires. Acknowledgments This work, as a part of MSc. thesis, is supported by the Office of Graduate Studies, University of Isfahan. The authors greatly appreciate Prof. M. H. Feiz and Prof. H. Sabzian from the University of Isfahan for their valuable comments, and Prof. M. Hietschold from Chemnitz University of Technology for his previous contribution. References 1. O’Sullivan JP, Wood GC: Morphology and mechanism of formation of porous anodic films on aluminium. P Roy Soc Lond A Mat 1970, 317:511–543.CrossRef 2.