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“Strychnos henningsii Gilg is used traditionally for the treatment of various ailments in southern Tariquidar in vivo Africa traditional medicine. The antioxidant and free radical scavenging activity of aqueous extract

of this plant was investigated both in -vivo and -vitro using spectroscopic method against 1,1-diphenyl-2-picrylhydrazyl (DPPH), superoxide anions, hydrogen peroxide (H(2)O(2)), nitric oxide (NO), 2,2′-azinobis [3-ethylbenzothiazoline-6-sulfonic acid] diammonium salt (ABTS) and the ferric reducing agent. Total phenols, flavonoid, flavonol and proanthocyanidin were also determined to assess their effects on the antioxidant activity of this plant. Free radical scavenging activity of the plant extract against H(2)O(2), ABTS and NO was concentration dependent with IC(50) value of 0.023, 0.089 and 0.49 mg/ml respectively. However, S. henningsii exhibited lower inhibitory activity against DPPH with IC(50) value of 0.739 mg/ml. The reducing power of the extract was found to be concentration dependent. The administration of the aqueous extract at 250, 500 and 1000 mg/kg body weight to male Wistar rats significantly increased the percentage inhibition of reduced glutathione (GSH), superoxide dismutase (SOD) and catalase (CAT). Whereas, lipid peroxidation

level in hepatotoxic rats decreased significantly at the dose of 500 and 1000 mg/kg body weight at the end of 7 days. The extract yielded high phenol content (48 mg/g tannic acid equivalent) followed by proanthocyanidin (8.7 mg/g catechin equivalent) flavonol (5.5 mg/g quercetin selleck chemicals equivalent) and flavonoids (4.8 mg/g quercetin equivalent) respectively. A positive linear correlation was observed between these polyphenols and the free radical scavenging activities.”
“Hydrogenated silicon (Si:H) thin films were fabricated on glass substrates by low frequency inductively coupled plasma-assisted chemical vapor deposition using a silane precursor with low hydrogen dilution at PD173074 room temperature. The crystallinity and microstructure properties of the Si: H thin films deposited at different inductive radio-frequency (rf) power density were systematically studied

by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. We found that at a low rf power density of 16.7 to 20.8 mW/cm(3), the structure of silicon thin films evolves from a completely amorphous phase to an intermediate phase containing both amorphous and microcrystalline silicon. As the power density is increased to a moderate value of 25 mW/cm(3), a highly crystallized (111)-preferred hydrogenated microcrystalline silicon (mu c-Si:H) film featuring a vertically aligned cone-shaped structure, is emerging. Both the crystallinity and deposition rate exhibit a monotonic increase with the increase in the rf power density, reaching a maximum value of 85% and 1.07 nm/s, respectively, at a power density of 41.7 mW/cm(3).