At this stage, the morphology of the annealed film seems to be do

At this stage, the morphology of the annealed film seems to be dominated by the initial morphology of deposited metal film. For the thickness between 10 and

20 nm (e.g., 12 and 14 nm), the annealing temperature obviously influences the shape, diameter, and center-to-center distance of the nanoparticles (Figure 6a,c). The variation in density of the nanoparticles (Figure 6e,f) is attributed to the different Ag quantities or thicknesses. Relevant work has been previously reported by Wang et al. [26] who manipulated the size and distribution of learn more Ag nanoparticles by the film thickness and laser ablation parameters. However, they only studied the influence of film thickness without a more detailed experiment. Here, our investigation

shows that the nanoparticles are irregular before the thorough breaking up of the bi-continuous structure. Then, they tend to be more and more spherical with the increasing annealing temperature, and finally, most strip-type nanoparticles are transformed into perfectly spherical shapes due to the high surface energy of metal. Once stable semispherical nanoparticles https://www.selleckchem.com/products/qnz-evp4593.html are formed, the morphology rarely changes even at high annealing temperatures from 200°C to 300°C. With the semispherical Ag nanoparticles patterned on the Si substrate as catalyst, SiNH arrays can be fabricated by INK1197 clinical trial chemical etching. As is shown in Figure 6b,d, the morphologies of SiNH arrays match well with the corresponding Ag nanoparticles shown in Figure 6a,c, respectively. It has been pointed out that the light-trapping characteristics of the SiNH arrays were comparable to or even better than nanorods [27]. A maximum efficiency of 27.8% from

Si nanohole solar cells was predicted by optimizing various structural parameters. Figure 6 SEM images of Ag film. (a) A 12-nm Ag film annealed at 200°C for 10 min, (b) planar view of corresponding etching results to (a), (c) 14-nm-thick Ag film annealed at 250°C for 10 min, and (d) planar view of corresponding etching results to (c). All Inositol monophosphatase 1 the scale bars of the insets are 500 nm. (e, f) The statistical distribution for the average hole diameters for (b) and (d), respectively. Conclusion We demonstrate a simple and low-cost method based on the metal dewetting process combined with Ag-assisted chemical etching to fabricate SiNW and SiNH arrays. Both Ag mesh with holes and Ag nanoparticles can be formed without a lithography step. The morphologies are controlled by the Ag film dewetting behavior via thermal annealing. By adjusting the film thickness and annealing temperature, the size and distribution of the holes and nanoparticles can be manipulated. The morphologies of the as-fabricated SiNW and SiNH arrays match well with the holes and nanoparticles.

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